Input/output interfacing circuit, input/output interface, and semiconductor device having input/out interfacing circuit

ABSTRACT

The current generating unit in the transmitter generates output currents in accordance with a plurality of logic values. The reference current generating unit in the receiver generates a plurality of reference currents. The current comparing units in the receiver respectively compares reference currents with output current from the transmitter and restores the logic values. That is, the current is varied in correspondence with the logic values that are transmitted from the transmitter to the receiver, wherein the logic values are restored in the receiver according to a difference in the current value. Forming a plurality of current comparing units in the receiver makes it possible to easily compare the values of the output current from the transmitter and a plurality of reference currents. Therefore, the number of multi-valued bits can be easily increased so as to construct a high bit-rate multi-valued input/output interface.

This is a Division of application Ser. No. 09/820,719; now U.S. Pat. No.6,525,570 filed Mar. 30, 2001. The disclosure of the priorapplication(s) is hereby incorporated by reference herein in itsentirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an input/output interfacing circuitimplemented in a semiconductor device, etc., and in particular itrelates to an input/output interfacing circuit capable of inputting andoutputting multiple values by a single signal line.

2. Description of the Related Art

Semiconductor devices such as a memory LSI, microprocessor, etc., are inthe progress of high integration and high rate through the developmentof semiconductor manufacturing technology, wherein the data transferrate has improved year by year.

In prior arts, in order to improve the data transfer rate, for example,in a memory LSI, a clock synchronizing type memory such as a synchronousDRAM, DDR SDRAM (Double Data Rate SDRAM), Rambus DRAM, etc., where aninput/output circuit has improved operation speed has been developed.Also, the data transfer rate has been improved by increasing the numberof bits of the input/output data to 16 or 32.

However, there is a limitation to heightening the operation speed of theinput/output circuits. Also, an increase in the number of terminalsincreases the number of pads. Since the pad size depends on thepackaging technology, it is difficult to shrink the size assemiconductor elements become finer. As a result, there is anundesirable possibility that the chip size is increased due to anincrease in the number of pads. Hereafter, there is a possibility thatthe chip size is determined based on the number of pads. In a memoryLSI, even if the number of address terminals is increased owing to theimprovement of the integration level and an increase in the memorycapacity, the chip size may be increased as described above.

As a way of improving the data transfer rate without an increase in thenumber of pads, that is, an increase in the chip size, a multiple valueof data or addresses is taken into consideration.

FIG. 1 shows a multi-valued input/output circuit that the inventor hasstudied. The circuit shown in FIG. 1 is not publicly known.

In this type of multi-valued input/output circuit, a voltage generatingunit 1 is formed in a semiconductor device at a transmitter that outputsdata, and a plurality of voltage comparing units 2, a reference voltagegenerating unit 3 and a data restoring unit 4 are formed in asemiconductor device at a receiver that receives data.

The voltage generating unit 1 includes a data restoring unit 1 a thatdecodes two-bit output data D1 and D0, a resistor part 1 b thatgenerates four types of voltages V4, V3, V2 and V1 by dividingresistance, and an output part 1 c that outputs any one of the voltagesV4 through V1 as an output voltage VOUT. The output part 1 c is composedof a switch such as a CMOS transmission gate, etc. That is, the voltagegenerating unit 1 gives four types of output voltages VOUT to asemiconductor device at the receiver in response to the output data D1and D0.

The respective voltage comparing units 2 compare the output voltagesVOUT with the reference voltages VREF3.5, VREF2.5 and VREF1.5,respectively, accept the comparison results in synchronization with aclock signal CLK, and output the results as the input results RSL3,RSL2, and RSL1. The reference voltage generating unit 3 generates threetypes of reference voltages VREF3.5 through VREF1.5 by dividing theresistance. Herein, the reference voltage VREF3.5 is set betweenvoltages V3 and V4, the reference voltage VREF2.5 is set betweenvoltages V2 and V3, and the reference voltage VREF1.5 is set betweenvoltages V1 and V2. That is, the figures at the end of these voltagesshow the relative values of voltages.

The data restoring units 4 receive the input results RSL3 through RSL1and make any one of the input data IND3 through IND0 into a high levelin accordance with the logic value of the output data D1 and D0.

FIG. 2 shows the detail of the voltage comparing unit 2.

The voltage comparing unit 2 includes a differential amplifier 5, alatching circuit 6, and an output circuit 7. The differential amplifier5 has a current mirror circuit and changes the output node to a highlevel or low level in accordance with the output voltage VOUT andreference voltages VREF3.5 (or VREF2.5, VREF1.5). The latching circuit 6accepts an output from the differential amplifier 5 in synchronizationwith a rise edge of a clock signal CLK. The output circuit 7 outputsdata, which are latched by the latching circuit 6, as the input resultsRSL3 (or RSL2, RSL1).

FIG. 3 shows the detail of the data restoring unit 4.

In the data restoring unit 4, inverted logic of the input result RSL3 isoutputted as input data IND3, inverted logic of the input result RSL2 isoutputted as input data IND2 when the input result RSL3 is at a highlevel, and inverted logic of the input result RSL1 is outputted as inputdata IND1 when the input result RSL2 is at a high level, and the logic,which is the same as the input result RSL1, is outputted as input dataIND0. As a result, for example, when both output data D1 and D0 are at ahigh level (“3” in the binary code), only the input data IND3 is madeinto a high level, and when the output data D1 and D0 are in a low leveland high level (“1” in the binary code), respectively, only the inputdata IND1 is made into a high level.

As shown above, in the transmitter, any one of the voltages V4 throughV1 divided in response to the output data D1 and D0 is selected andoutputted as an output voltage VOUT. In the receiver, by obtaining thelogic value corresponding to the output voltage VOUT, a multiple value(in this case, 2 bits) are transmitted and received.

However, the voltage generator unit 1 of the transmitter selects any oneof a plurality of voltages V4 through V1, which are obtained by dividingthe resistance, by a switch such as a CMOS transmission gate, etc., inresponse to the output data D1 and D0. The difference in voltagecorresponding to the logic value is small because the voltages aregenerated by dividing the resistance. Therefore, it was difficult tochange the output voltage VOUT to a high rate when switching the CMOStransmission gate, etc. Since the difference in voltage corresponding tothe logic value is small, only two-bit of data could be made into amultiple value.

In addition, the voltage range in which the differential amplifier 5effectively operates is predetermined in the receiver, which makes itdifficult to actuate the differential amplifier 5 in all the ranges ofthe output voltages VOUT. As a result, the differential amplifiers 5 ofthe voltage comparing units 2 shown in FIG. 2 have to be designed so asto optimally operate in correspondence with the received output voltageVOUT, respectively.

SUMMARY OF THE INVENTION

It is therefore an object of the invention to provide an input/outputinterfacing circuit capable of inputting and outputting multiple valuedata at high speed by a simplified circuit, and a semiconductor devicehaving the input/output interfacing circuit.

According to one of the aspects of the input/output interfacing circuitof the invention, the input/output interfacing circuit includes acurrent generating unit in the transmitter, and a reference currentgenerating unit, a plurality of current comparing units, and a datarestoring unit in the receiver. The current generating unit generatesoutput currents respectively corresponding to each of logic values. Thereference current generating unit generates a plurality of referencecurrents. The current comparing units respectively compare the referencecurrents with the output current from the transmitter. The datarestoring unit restores the logic values in the receiver according tothe comparison results from the current comparing units. That is, thecurrent is varied in accordance with each of logic values (for example,data, address, etc.) that are transmitted from the transmitter to thereceiver, and the logic value is restored in the receiver according todifferences in the current values. In other words, changing values ofthe currents which flow in a signal line, enables transmission ofmultiple value information from the transmitter to the receiver.

By forming a plurality of current comparing units in the receiver, it ispossible to easily, respectively compare the level of the output currentfrom the transmitter with the levels of a plurality of referencecurrents. Further, it becomes possible to widen the operation range ofthe current comparing unit in comparison with prior art voltagecomparing circuits. This eliminates necessity for fine adjustment of thecurrent comparing unit in accordance with a value of an output currentfrom the transmitter. That is, the design data of a plurality of currentcomparing units can be made the same.

It is possible to construct a high bit-rate multi-valued input/outputinterface by converting the logic value to the current value in thetransmitter and restoring the logic value by comparing the intensity ofthe current in the receiver, compared with prior arts in which thevoltage has been divided. In addition, in comparison with the prior artsin which the voltage has been divided, it is possible to easily increasethe number of bits with a multiple value. As a result, the data transferrate can be improved.

When the transmitter and the receiver are formed in separate devices,the number of input/output terminals (the number of pads) of devices canbe decreased. The decrease in pad number results in reducing the chipsize of both devices. In case where the transmitter and the receiver areformed in the same device, the number of signal line patterns thattransmit logic values can be reduced. A reduction in layout size of thesignal line patterns enables a reduction in chip size.

According to another aspect of the input/output interfacing circuit ofthe invention, the number of current comparing units and the number ofreference currents generated by the reference current generating unitare set one smaller than the number the logic value could possibly be.Each of the reference current values is respectively set between theoutput current values adjacent thereto. Therefore, the number of thecurrent comparing units can be minimized.

According to still another aspect of the input/output interfacingcircuit of the invention, the transmitter and the receiver arerespectively formed in separate devices. The input/output interfacingcircuit includes a standard current generating unit in the transmitter,and a dummy current generating unit and a correcting circuit in thereceiver. The standard current generating unit uses an element, which isidentical to or equivalent to the element used in the current generatingunit, and generates the standard current at the output. For example, thestandard current generating unit generates the standard current at theoutput, which has the same value as the output current generated by thecurrent generating unit corresponding to a logic value. The dummycurrent generating unit is constructed identically to or equivalently tothe standard current generating unit, and generates standard current atthe input. The correcting circuit controls the reference currentgenerating unit to correct the reference current according to adifference between the standard current at the output and the standardcurrent at the input.

The output current and the reference current that are compared by thecurrent comparing unit are expected to intrinsically have apredetermined correlation. However, where the transmitter and receiverare formed in separate devices, the relationship between the outputcurrent and the reference current may change due to differences in powersupply voltage, operating temperature, or production conditions of therespective devices. Since the standard current generating unit and thedummy current generating unit are formed identically to or equivalentlyto each other, the change creates a difference between the standardcurrent at the output and the standard current at the input. Therefore,since the reference current is corrected according to the difference, itis possible to restore the logic value in the receiver with reliability.

According to further another aspect of the input/output interfacingcircuit of the invention, the transmitter and the receiver are formed inseparate devices. The input/output interfacing circuit includes, in thereceiver, a current source that supplies a current to the currentgenerating unit in the transmitter, and a current source that supplies acurrent to the reference current generating unit in the receiver.Therefore, the current supply capacities of both the current sourcesbecome identical to each other. As a result, the correlation between theoutput current and the reference current can be maintained with highaccuracy.

According to yet another aspect of the input/output interfacing circuitof the invention, the current generating unit includes a plurality oftransistors with drivability in different stages of strength. Each bitof the logic values, which are expressed in binary number isrespectively supplied to the inputs of transistors. The output currentis generated according to a value of current which flows in thetransistors that are turned on in accordance with the logic values.Therefore, the logic values consisting of a plurality of bits can beeasily converted to an output current.

According to yet another aspect of the input/output interfacing circuitof the invention, the current comparing unit compares the output currentwith the reference current in synchronization with a timing signal usedin the transmitter. That is, the output current and reference currentcan be compared with each other with accuracy at a predetermined timingsynchronized with the transmitter.

According to one of the aspects of the input/output interface of theinvention, a transmitting device includes a current generating unit anda standard current generating unit, and the receiving device includes areference current generating unit, a current comparing unit, a dummycurrent generating unit, and a correcting circuit. The currentgenerating unit generates an output current corresponding to the logicvalue. The standard current generating unit generates the standardcurrent at the output by using an element that is identical to orequivalent to the element used for the current generating unit. Forexample, the standard current generating unit generates standard currentat the output having the same value as the output current that isgenerated by the current generating unit, corresponding to a logicvalue. The reference current generating unit generates referencecurrents. The current comparing unit respectively compares values of thereference currents and the output current. The dummy current generatingunit is constructed identically to or equivalently to the standardcurrent generating unit, and generates standard current at the input.The correcting circuit controls the reference current generating unit onthe basis of a difference between the standard current at the output andthe standard current at the input, thereby correcting the referencecurrent values.

The output current and the reference current that are compared by thecurrent comparing unit are expected to intrinsically have apredetermined correlation. However, where the transmitter and thereceiver are formed in separate devices, the relationship between theoutput current and the reference current may change due to differencesin power supply voltage, operating temperature, or production conditionsof the respective devices. Since the standard current generating unitand the dummy current generating unit are formed identically to orequivalently to each other, the change leads to creating a differencebetween the standard current at the output and the standard current atthe input. Therefore, since the reference current is corrected accordingto the difference, it is possible to reliably compare a value of thereference current and the output current.

According to one of the aspects of a semiconductor device having theinput/output interfacing circuit of the invention, the input/outputinterfacing circuit includes a reference current generating unit, aplurality of current comparing units, and a data restoring unit. Thereference current generating unit generates a plurality of referencecurrents. The current comparing units respectively compare the referencecurrents with the output currents in accordance with the logic valuesupplied from the exterior. In addition, the data restoring unitrestores the logic value sent from the transmitter in the receiveraccording to the comparison results from the current comparing units.That is, the current is varied in accordance with the logic values (forexample, data, address, etc.) that are transmitted from the transmitterto the receiver, the logic value is restored in the receiver accordingto a difference in the current values. In other words, changing valuesof the currents which flow in a signal line, enables transmission ofmultiple value information from the transmitter to the receiver.

Since a plurality of current comparing units are formed in the receiver,it is possible to easily compare values of the output current from thetransmitter and a plurality of reference currents. It is also possibleto further widen the operating range of the current comparing units,compared with a prior art voltage comparing unit. As a result, it is notnecessary to fine adjust the current comparing units in accordance withthe values of the output current from the transmitter. That is, thedesign data of a plurality of current comparing units can be madeidentical to each other.

For example, receiving multiple value data in correspondence with acurrent value from one input terminal allows a reduction in the numberof input terminals (number of pads) of a semiconductor device.Accordingly, the reduction in pad number enables a reduction in the chipsize of the devices.

According to another aspect of the semiconductor device having theinput/output interfacing circuit of the invention, the input/outputinterfacing circuit includes a current generating unit having aplurality of transistors with drivability in different stages ofstrength. Each bit of the logic values, which are expressed in binarynumber, is supplied to the inputs of the transistors. The input/outputinterfacing circuit generates an output current, which is inputted toand outputted from the exterior, according to a value of current whichflows in the transistors that are turned on in accordance with the logicvalues. Therefore, the logic values consisting of a plurality of bitscan be easily converted to an output current and can be inputted to oroutputted from the exterior.

BRIEF DESCRIPTION OF THE DRAWINGS

The nature, principle, and utility of the invention will become moreapparent from the following detailed description when read inconjunction with the accompanying drawings in which like parts aredesignated by identical reference numbers, in which:

FIG. 1 is a block diagram showing a prior art multi-valued input/outputinterfacing circuit;

FIG. 2 is a circuit diagram showing the voltage comparing unit of FIG.1;

FIG. 3 is a circuit diagram showing the data restoring unit of FIG. 1;

FIG. 4 is a block diagram showing the first embodiment of the invention;

FIG. 5 is a circuit diagram showing the detail of the output circuit ofFIG. 4;

FIG. 6 is a circuit diagram showing the detail of the input circuit ofFIG. 4;

FIG. 7 is a circuit diagram showing the detail of the reference currentgenerating unit of FIG. 4;

FIG. 8 is a circuit diagram showing the detail of the data restoringunit of FIG. 4;

FIG. 9 is a block diagram showing the second embodiment of theinvention;

FIG. 10 is a circuit diagram showing the detail of the output circuit ofFIG. 9;

FIG. 11 is a circuit diagram showing the detail of the input circuit ofFIG. 9;

FIG. 12 is a circuit diagram showing the detail of the reference currentgenerating unit of FIG. 9; and

FIG. 13 is a circuit diagram showing the detail of the correctingcircuit of FIG. 9.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the invention will be explained in detailwith reference to the accompanying drawings.

FIG. 4 shows the first embodiment of an input/output interfacing circuitand a semiconductor device having the input/output interfacing circuitaccording to the invention.

In the embodiment, a part of an output circuit 10 is formed in asemiconductor device (transmitting device) that becomes a transmitter,and another part of the output circuit 10, fifteen input circuits 12, aclock buffer 14, a reference current generating unit 16 and a datarestoring unit 18 are formed in a semiconductor device (receivingdevice) that becomes a receiver. The respective semiconductor devicesare formed on a silicon substrate by using the CMOS process.

The output circuit 10 includes a current generating unit 20 thatgenerates sixteen types of output currents IOUT at the output node OUTin response to four bits of output data D3, D2, D1 and D0, and a currentsource 22 that provides a current to the output node OUT. The currentsource 22 is formed in a semiconductor device of the receiver. Theoutput current IOUT being of currents supplied from the current source22, flows into the output circuit 10 in correspondence with the outputdata D3 through D0.

The input circuits 12, respectively, include a current comparing unit24, a current source 26, and an accepting circuit 28. The currentcomparing unit 24 compares a reference current IREF14.5(or IREF13.5through IREF0.5), which is generated by the reference current generatingunit 16 described later, with the output current IOUT, and outputs thecomparison result to the accepting circuit 28. The accepting circuit 28accepts the comparison result in synchronization with an internal clocksignal ICLK (timing signal), and outputs the accepted information as theinput results RSL15 through RSL1. In other words, the output current andthe reference current are compared in synchronization with the internalclock signal ICLK. Herein, the internal clock signal ICLK is a signalthat a clock signal CLK used for the semiconductor device of thetransmitter is received by the clock buffer 14.

The reference current generating unit 16 gives fifteen types ofreference currents IREF14.5 through IREF0.5 to connection nodes REF withthe current comparing unit 24 in the respective input circuits 12. Thenumber of reference currents IREF14.5 through IREF0.5 is made onesmaller than the number of types of the output currents IOUT.

The data restoring unit 18 restores a logic value of the output data D3through D0 by making any one of the input data IND15 through IND0 into ahigh level upon receiving the input results RSL15 through RSL1.

FIG. 5 shows the detail of the output circuit 10.

The current generating unit 20 of the output circuit 10 includes nMOStransistors 20 a, 20 b, 20 c and 20 d whose gate widths have a ratio of1:2:4:8, and an nMOS transistor 20 e having a power supply line VIIconnected to its gate. Hereinafter, an nMOS transistor and a pMOStransistor are merely called as “nMOS” and “pMOS”. In the drawing, afigure adjacent to the nMOSs shows the ratio of the gate width. The nMOStransistor 20 e is used as a high-resistance resistor, and prevents thenode OUT from floating.

The nMOSs 20 a, 20 b, 20 c and 20 d are formed so as to make the channellengths thereof the same. For this reason, the current drivability ofthe nMOSs 20 a, 20 b, 20 c and 20 d is increased two times by two timesin proportion to the gate width. Output data D3 through D0 are,respectively, provided into the gates of the nMOSs 20 a, 20 b, 20 c and20 d. That is, since the gate widths of the nMOSs 20 a, 20 b, 20 c and20 d are set with respect to the weighting of the output data D3 throughD0, the output current IOUT that is generated in the output circuit 10has sixteen types corresponding to the binary number of output data D3through D0.

The current source 22 of the output circuit 10 includes a pMOS whosesource is connected to the power supply line VII and whose gate anddrain are connected to the node OUT.

FIG. 6 shows the detail of the input circuit 12.

The current comparing unit 24 of the input circuit 12 is composed of acombination of two differential amplifiers. The respective differentialamplifiers include a current mirror part composed of nMOS, and adifferential input part composed of pMOS. The gate of one pMOS of thedifferential input part is connected to the node OUT, and the gate ofthe other pMOS is connected to the node REF, into or from which thereference current IREF14.5(or IREF13.5 through IREF0.5) is inputted oroutputted. That is, a voltage in accordance with the output current IOUTand reference current IREF14.5 through IREF0.5 is respectively appliedto the gates of pMOSs.

Where the output current IOUT is larger than the reference currentIREF14.5(or IREF13.5 through IREF0.5), the voltage between the gate andsource of the pMOS connected to the node OUT is made lower than thevoltage between the gate and source of the pMOS connected to the nodeREF. Therefore, the output nodes ND01 and ND02 of the current comparingunit 24, respectively, are made into a high level and a low level.

The current source 26 of the input circuit 12 includes a pMOS whosesource is connected to the power supply line VII and whose gate anddrain are connected to the node REF. Since the pMOS of the currentsource 26 shown in FIG. 5 is constructed so as to have the same size asthat of the pMOS of the current source 22 shown therein, they have thesame current supply capacity. By forming both the current sources 22 and26 in the semiconductor device of the receiver, the current supplycapacity of the current sources 22 and 26 can be made the sameregardless of fluctuation in production conditions.

The accepting circuit 28 of the input circuit 12 is composed of a latchpart 30 and an output part 32. The latch part 30 includes CMOS inverters30 a and 30 b that constitutes a latch, to which an input and an outputare alternately connected, a feedback nMOS 30 c that receives invertedlogic of the output of the CMOS inverter 30 a by the gate, a feedbacknMOS 30 d that receives inverted logic of the output of the CMOSinverter 30 b by the gate, nMOS 30 e and 30 f whose gates are,respectively, connected to the node ND01 and ND02, pMOS 30 g and 30 hthat, where the internal clock signal ICLK being a timing signal is at alow level, make the outputs of the CMOS inverters 30 a and 30 b into ahigh level, and inactivates the latch, and an nMOS 30 i that, where theinternal clock signal ICLK is at a high level, connects the latch part30 to the power supply (ground line VSS), and activates the latch part30.

The latch part 30 accepts the comparison results by the currentcomparing unit 24, which is expressed in terms of a potential differencebetween the nodes ND01 and ND02, in synchronization with a rise edge ofthe internal clock signal ICLK, and outputs the accepted information tothe output part 32.

The output part 32 includes output buffers 32 a and 32 b each outputtinglogic opposed to each other in response to the output of the latch part30, and a latch 32 c that latches the output of the output buffers 32 aand 32 b. The output buffer 32 a is composed of a pMOS that receives anoutput of the CMOS inverter 30 a by the gate, and an nMOS that receivesinverted logic of the output of the CMOS inverter 30 b by the gate. Theoutput buffer 32 b is composed of a pMOS that receives an output of theCMOS inverter 30 b by the gate, and an nMOS that receives inverted logicof the output of the CMOS inverter 30 a by the gate. And, the inputresult RSL15 (or RSL14 through RSL1) is outputted from the output buffer32 b.

FIG. 7 shows the detail of the reference current generating unit 16.

The reference current generating unit 16 includes fifteen nMOSs havingthe power supply line VII connected to the gate. The nMOS is formed sothat the relative value of the gate width has a 1.0 step between 0.5 and14.5. The nMOSs cause the reference currents IREF14.5 through IREF0.5corresponding to the respective gate widths to flow into the ground lineVSS, respectively. In the drawing, the figures shown adjacent to thenMOSs show the ratio of the gate widths. These figures correspond to thefigures shown in the output circuit 10 in FIG. 5. The channel lengths ofthe nMOSs of the reference current generating unit 16 are made identicalto the channel lengths of the nMOSs 20 a through 20 d of the outputcircuit 10. Since the current sources 22 and 26 have the same capacity,the relative value of the drivability of the nMOSs of the referencecurrent generating unit 16 and the nMOSs 20 a through 20 d of the outputcircuit 10 is expressed in terms of figures written adjacent to thenMOSs.

FIG. 8 shows the detail of a data restoring unit 18.

The data restoring unit 18 is composed of a plurality of inverters andNOR gates. In the data restoring unit 18, the inverted logic of theinput result RSL15 is outputted as input data IND15, the inverted logicof the input result RSL14 is outputted as input data IND14 where theinput result RSL15 is at a high level, the inverted logic of the inputresult RSL13 is outputted as input data IND13 where the input resultRSL14 is at a high level, the inverted logic is thus outputted, andfinally, the inverted logic of the input result RSL1 is outputted asinput data IND1 where the input result RSL2 is at a high level, and thesame logic as the input result RSL1 is outputted as input data IND0.Resultantly, for example, where all the output data D3 through D0 are ata high level (“15” in the binary data), only the input data IND5 is madeinto a high level, and where the output data D3, D2, D1 and D0 are at alow level, high level, low level and high level, respectively, (“5” inthe binary data), only the input data IND5 is made into a high level.

In the input/output interfacing circuit described above, the logic value(multiple value) of the transmitter is transmitted to the receiver viaone signal line (note OUT) as described above, and is restored.

First, in the transmitter, an output current IOUT in accordance with thelogic value is generated, wherein the node OUT connected to onedifferential input terminal in the current comparing unit 24 of thereceiver is made into a predetermined voltage. In order to control thecurrent flowing in the node OUT in response to the output data D3through D0, the node OUT is made into a predetermined voltage at a highrate. On the other hand, the node REF connected to the otherdifferential input terminal in fifteen current comparing units 24quickly turns to a predetermined voltage in response to the referencecurrents IREF14.5 through IREF0.5. The voltage of the node OUT iscompared with the voltage of the node REF, and the comparison resultsare outputted as the input results RSL15 through RSL1. Then, multiplevalue data transmitted from the transmitter in response to the inputresults RSL15 through RSL1 are restored as any one of the sixteen typesof input data IND15 through IND0. That is, the multiple value data thatare transmitted from the transmitter are restored by respectivelycomparing the output current IOUT generated in the transmitter with thereference currents IREF14.5 through IREF0.5 generated in the receiver.

As described above, in the input/output interfacing circuit andsemiconductor device having the input/output interfacing circuitaccording to the embodiment, the output current IOUT from thetransmitter is compared with the reference currents IREF14.5 throughIREF0.5, respectively, by a plurality of the current comparing units 24,which are formed in the semiconductor device that is the receiver,wherein the logic value can be restored in the receiver on the basis ofthe comparison results. That is, changing values of the current flowingin the signal line of the node OUT enables transmission of multiplevalue information from the transmitter to the receiver.

Since a plurality of the current comparing units 24 are formed in thereceiver, it is possible to easily compare the values of the outputcurrent IOUT from the transmitter and a plurality of the referencecurrents IREF14.5 through IREF0.5. Since the range of the output currentIOUT can be set in accordance with the range of operation of the currentcomparing units 24, it is not necessary to fine adjust the respectivecurrent comparing units 24 in accordance with the value of the outputcurrent IOUT from the transmitter. As a result, the design data such aslayout data, etc., of the input circuit 12 can be commonly used.

Since the logic values D3 through D0 are converted to the current valueIOUT by the transmitter, and the level of the current IOUT is comparedwith the voltage value of the node OUT by the receiver to restore thelogic value, it is possible to construct a high rate multi-valuedinput/output interfacing circuit. Also, compared with the prior art inwhich a voltage is divided, it is possible to easily increase the numberof multi-valued bits. Therefore, it is possible to improve the datatransfer rate. This enables a construction of the input/output interfacewhere multiple value data can be input/output by a simple circuit.

Since multiple value information can be transmitted via one signal line(node OUT), the number of input/output terminals (number of pads) of thesemiconductor device can be reduced. Since the number of pads isreduced, it is possible to reduce the chip size of both thesemiconductor devices (transmitter and receiver).

In the semiconductor device of the transmitter, a plurality of nMOSs 20a through 20 d whose drivability is increased one after another areformed in the current generating unit 20 of the output circuit 10,respective bits (D3 through D0) of a logic value, which is expressed inbinary number, are provided to the inputs of the nMOSs 20 a through 20d. Therefore, the logic value consisting of a plurality of bits iseasily converted to the output current IOUT, wherein the logic value canbe inputted to and outputted from the exterior.

FIG. 9 shows a second embodiment of an input/output interfacing circuitand a semiconductor device having the same input/output interfacingcircuit according to the invention. Elements which are identical tothose in the first embodiment are given the same reference numbers, anddetailed description thereof is omitted.

In the second embodiment, a current generating unit 36 of an outputcircuit 34 is formed instead of the current generating unit 20 of theoutput circuit 10 in the first embodiment, a current source 40 of aninput circuit 38 is formed instead of the current source 26 of the inputcircuit 12 in the first embodiment, and a reference current generatingunit 42 is formed instead of the reference current generating unit 16 ofthe first embodiment. Further, a correcting circuit 44 is newly formed,which controls the reference current generating unit 42. That is, thecurrent generating unit 36 of the output circuit 34 and a part of thestandard current generating unit 46 of the correcting circuit 44 areformed in a semiconductor device (transmitting device) of thetransmitter, and the current source 22 of the output circuit 34, anotherpart of the standard current generating unit 46 of the correctingcircuit 44, a correcting unit 48, a dummy current generating unit 50,fifteen input circuits 38, a clock buffer 14, a reference currentgenerating unit 42, and a data restoring unit are formed in thesemiconductor device (receiving device) of the receiver. The respectivesemiconductor devices are formed on a silicon substrate by using theCMOS process.

FIG. 10 shows the detail of the output circuit 34.

In the output circuit 34, a high-resistance resistor R1 is formedinstead of nMOS 20 e of the current generating unit 20 of the firstembodiment. The other construction thereof is identical to that of thefirst embodiment.

FIG. 11 shows the detail of the input circuit 38.

The current source 40 of the input circuit 38 is formed in the currentsource 26 of the first embodiment by adding a high-resistance resistorR2, one end of which is connected to the ground line VSS. The otherconstruction thereof is identical to that of the input circuit 38 of thefirst embodiment.

FIG. 12 shows the detail of the reference current generating unit 42.

The reference current generating unit 42 is formed by connecting theoutput node VREFG of the correcting unit 48 to the nMOS gate of thereference current generating unit 16 of the first embodiment. The otherconstruction thereof is identical to that of the reference currentgenerating unit 16 of the first embodiment.

FIG. 13 shows the detail of the correcting circuit 44.

The standard current generating unit 46 of the correcting circuit 44includes an nMOS and high-resistance resistor R1, which are identical tothose of the current generating unit 36 of the output circuit 34, and apMOS that is identical to that of the current source 22 of the outputcircuit 34. The respective nMOS gates are connected to the power supplyline VII. That is, the standard current generating unit 46 is a dummycircuit that simulates the operations of the output circuit 34 when thelogic value of the output data is “15”. An output current IOUT1(standard current at the output) corresponding to the logic value “15”is generated in the output node OUT1 of the standard current generatingunit 46. The standard current generating unit 46 may be constructedequivalently to the current generating unit 36 and the current source22.

The correcting unit 48 of the correcting circuit 44 includes a currentmirror part composed of pMOSs and a differential input part composed ofnMOSs. The output node OUT1 is connected to one nMOS gate of thedifferential input part while the output node OUT2 of the dummy currentgenerating unit 50 is connected to the other nMOS gate. A boost voltageVPP, which is higher than the power supply voltage VII, is supplied tothe pMOSs source. Therefore, even if a voltage, which is higher than thepower supply voltage VII, is inputted into the nMOSs gate, thecorrecting unit 48 can correctly operate. That is, the standard currentgenerating unit 46 can be made equivalent to the dummy currentgenerating unit 50.

The dummy current generating unit 50 of the correcting circuit 44includes nMOSs and high-resistance resistor R1, which are identical tothose of the current generating unit 36 of the output circuit 34, and apMOS that is identical to that of the current source 22 of the outputcircuit 34. The respective nMOS gates are connected to the output nodeVREFG of the correcting unit 48. The dummy current generating unit 50may be constructed equivalently to the current generating unit 36 andthe current source 22.

The above-described correcting circuit 44 can effectively operate wherethe characteristics of transistors, etc. differ from each other due to adifference in production conditions between the semiconductor device ofthe transmitter and that of the receiver, where the power supplyvoltages differ from each other in the devices, or where the operatingtemperatures differ from each other in the devices.

For example, when drivability of the transistor of the semiconductordevice in the transmitter is large, the output current IOUT that isgenerated in the current generating unit 36 shown in FIG. 9 is largerthan the current flowing in the nMOS produced under standard producingconditions (typical condition). Therefore, the relative values (FIGS. 1through 8) of the drivability of the nMOSs of the output circuit 34shown in FIG. 10 may change, respectively, compared with the relativevalues (FIGS. 14.5 through 0.5) of the drivability of the nMOSs in thereference current generating unit 42 shown in FIG. 12. As the result,there is a possibility that the comparison in the current comparingunits 24 is not correctly carried out.

Since the size of the nMOSs of the standard current generating unit 46of the correcting circuit 44 is the same as that of the nMOSs of thecurrent generating unit 36, the drivability of the standard currentgenerating unit 46 is increased along with the drivability of thecurrent generating unit 36. Therefore, the drivability of the nMOSs ofthe standard current generating unit 46 in the correcting circuit 44becomes larger than the drivability of the nMOSs of the dummy currentgenerating unit 50, wherein the output current IOUT1 becomes larger thanan output current IOUT2 (standard current at the input).

The correcting unit 48 receives a voltage of the node OUT1, which islower than the voltage of the node OUT2, and raises the voltage of theoutput node VREFG. The output node VREFG continues to be raised untilthe output current IOUT2 of the dummy current generating unit 50 isincreased to be equal to the voltage of the nodes OUT1 and OUT2.

The drivability of the respective nMOSs in the reference currentgenerating unit 42 becomes large due to the rise of the voltage of theoutput node VREFG. That is, the current supply capacity of the referencecurrent generating unit 42 is corrected. As a result, the current supplycapacity of the current generating unit 36 of the transmitter is madeequal to the current supply capacity of the reference current generatingunit 42 of the receiver regardless of differences in productionconditions, wherein correct comparisons can be carried out in thecurrent comparing units 24.

The embodiment can bring about effects that are similar to those of theabove-described first embodiment. In addition, since, in the embodiment,the reference currents IREF14.5 through IREF0.5 that the referencecurrent generating unit 42 of the receiver generates are corrected bythe correcting circuit 44 in accordance with the current supply capacityof the current generating unit 36 of the transmitter. Therefore,multiple value data transmitted from the transmitter can be correctlyrestored by the receiver, regardless of differences in productionconditions, the power supply voltage and/or, the operating temperaturein the semiconductor devices of the transmitter and the receiver. Inother words, it is possible to construct the input/output interfacecapable of quickly input/output multiple value data.

In addition, in the above-described embodiment, a description was givenof the example in which the output data D3 through D0 are transmitted tothe receiver. The invention is not limited to such an embodiment. Forexample, addresses, commands or control signals may be transmitted tothe receiver as multiple value data. Also, the multiple value data maynot be always of 4 bits, but may be of two bits or eight bits.

In the above-described embodiment, a description was given of theexample in which a transmitter and a receiver are formed in separatesemiconductor devices. The invention is not limited to such anembodiment. For example, the transmitter and receiver may be formed in asingle semiconductor device. Where the transmitter and receiver areformed in a single semiconductor device, the number of signal linepatterns can be reduced, in which a logic value is transmitted. Sincethe layout area of the signal line patterns is reduced, the chip sizecan be reduced.

In the above-described embodiment, a description was given of theexample in which multiple value data transmitted from a transmitter arecompared with a plurality of reference data by the receiver. Theinvention is not limited to such an embodiment. For example, the amountof information (not necessarily multiple value) transmitted from thetransmitter may be only compared by the receiver. At this time, acorrecting circuit that is equivalent to the above-described correctingcircuit 44 is formed, wherein the reference current may be corrected inaccordance with the current supply capacity of the current generatingunit of the transmitter.

The invention is not limited to the above embodiments and variousmodifications may be made without departing from the spirit and thescope of the invention. Any improvement may be made in part or all ofthe components.

1. A semiconductor device comprising an input/output interfacing circuitincluding a current generating unit which comprises a plurality oftransistors with drivability in different stages of strength, in whichinputs of said transistors each receives each bit of logic values whichare expressed in binary number, and comprises a high-resistance element,said transistors and said high-resistance element being connected inparallel between a current generation node and a power supply line, andsaid high-resistance element continuously flowing current between saidcurrent generation node and said power supply line, and generates atsaid current generation node output current according to values ofcurrents which flow in said transistors that are turned on in accordancewith a level of said each bit.
 2. A semiconductor device comprising aninput/output interfacing circuit including a current generating unitwhich comprises a plurality of transistors with drivability in differentstages of strength, in which inputs of said transistors each receiveseach bit of logic values which are expressed in binary number, andcomprises a high-resistance element continuously connecting a currentgeneration node and a power supply line, and generates at said currentgeneration node output current according to values of currents whichflow in said transistors that are turned on in accordance with a levelof said each bit, said semiconductor device further including a standardgenerating unit for generating standard current by using elementsidentical to elements that are used in said current generating unit. 3.A semiconductor device comprising an input/output interfacing circuitincluding a current generating unit which comprises a plurality oftransistors with drivability in different stages of strength, in whichinputs of said transistors each receives each bit of logic values whichare expressed in binary number, and comprises a high-resistance elementcontinuously connecting a current generation node and a power supplyline, and generates at said current generation node output currentaccording to values of currents which flow in said transistors that areturned on in accordance with a level of said each bit, saidsemiconductor device further including a standard current generatingunit for generating standard current using elements equivalent toelements that are used in said current generating unit.
 4. Asemiconductor device comprising an input/output interfacing circuitincluding a current generating unit which comprises a plurality oftransistors with drivability in different stages of strength, in whichinputs of said transistors each receives each bit of logic values whichare expressed in binary number, and comprises a standard currentgenerating unit for generating fixed standard current by using elementsidentical to elements that are used in said current generating unit, andgenerating output current according to values of currents which flow insaid transistors that are turned on in accordance with a level of saideach bit.
 5. The semiconductor device comprising an input/outputinterfacing circuit including a current generating unit according toclaim 4, wherein transistors of said standard current generating unitare on at all times by receiving a fixed voltage at their inputs.
 6. Asemiconductor device comprising an input/output interfacing circuitincluding a current generating unit which comprises a plurality oftransistors with drivability in different stages of strength, in whichinputs of said transistors each receives each bit of logic values whichare expressed in binary number, and comprises a standard currentgenerating unit for generating fixed standard current by using elementsequivalent to elements that are used in said current generating unit,and generates output current according to values of currents which flowin said transistors that are turned on in accordance with a level ofsaid each bit.
 7. The semiconductor device comprising an input/outputinterfacing circuit including a current generating unit according toclaim 6, wherein transistors of said standard current generating unitare on at all times by receiving a fixed voltage at their inputs.